- PII
- 10.31857/S2686953523600034-1
- DOI
- 10.31857/S2686953523600034
- Publication type
- Status
- Published
- Authors
- Volume/ Edition
- Volume 513 / Issue number 1
- Pages
- 119-124
- Abstract
- Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current-voltage characteristics in the region of low conductivity of the fabricated Zr/ZrO2/Au memristor structures have been studied in this work. For the first time, the reversible mechanisms of formation/destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in a nanotubular dioxide layer, have been analyzed. An equivalent electrical circuit of a parallel resistor connection have been proposed and discussed to describe the observed memristive behavior of the studied layered structures.
- Keywords
- нанотубулярные диоксиды металлов нанотрубки диоксида циркония мемристоры мемристивное поведение квантование проводимости
- Date of publication
- 18.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 5
References
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